Title :
A 59GHz-to-67GHz 65nm-CMOS high efficiency Power Amplifier
Author :
Aloui, Sofiane ; Kerherve, Eric ; Plana, Robert ; Belot, Didier
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
A two-stage single-ended Power Amplifier (PA) is fabricated for the 60GHz Wireless Personal Area Network (WPAN) standard. It is based on the 65nm CMOS technology from STMicroelectronics. The PA is biased in class A and uses distributed elements to perform impedances matching. S-parameters and large signal simulations are validated by measurement results. Load pull measurements are performed to get the best operation of the PA. It achieves a saturated output power (Psat) of 12dB and offers Power Added Efficiency (PAE) of 15%. The die area is 0.29mm2 with pads.
Keywords :
CMOS analogue integrated circuits; S-parameters; field effect MIMIC; impedance matching; millimetre wave power amplifiers; personal area networks; CMOS high efficiency power amplifier; S-parameters; STMicroelectronics; WPAN; frequency 67 GHz to 59 GHz; impedance matching; load pull measurements; size 65 nm; wireless personal area network; CMOS integrated circuits; CMOS technology; Coplanar waveguides; Gain; Impedance; Power measurement; Transmission line measurements;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2011 IEEE 9th International
Conference_Location :
Bordeaux
Print_ISBN :
978-1-61284-135-9
DOI :
10.1109/NEWCAS.2011.5981296
