• DocumentCode
    2716457
  • Title

    Terahertz quantum cascade laser in the InGaAs/GaAsSb material system

  • Author

    Deutsch, C. ; Benz, A. ; Detz, H. ; Nobile, M. ; Andrews, A.M. ; Klang, P. ; Schrenk, W. ; Strasser, G. ; Unterrainer, K.

  • Author_Institution
    Photonics Inst., Vienna Univ. of Technol., Vienna, Austria
  • fYear
    2010
  • fDate
    5-10 Sept. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate a terahertz quantum cascade laser based on the aluminum-free In0.53Ga0.47As/GaAs0.51Sb0.49 material system. Processed in a double metal waveguide configuration, disk devices reach operating temperatures up to 105 K and the spectral emission lies between 3.6 and 4.1 THz.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum cascade lasers; terahertz wave devices; terahertz wave spectra; waveguide lasers; In0.53Ga0.47As-GaAs0.51Sb0.49; disk devices; double metal waveguide configuration; frequency 3.6 THz to 4.1 THz; spectral emission; terahertz quantum cascade laser; Indium gallium arsenide; Metals; Optical reflection; Optical sensors; Performance evaluation; Quantum cascade lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
  • Conference_Location
    Rome
  • Print_ISBN
    978-1-4244-6655-9
  • Type

    conf

  • DOI
    10.1109/ICIMW.2010.5612814
  • Filename
    5612814
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2716457