Title :
CMOS IC transient radiation effects investigations, model verification and parameter extraction with the test structures laser simulation tests
Author :
Nikiforov, A.Y. ; Chumakov, A.I. ; Skorobogatov, P.K.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
Abstract :
The specialized test chip is designed and investigated for CMOS RAMs dose rate and single event effects research. The laser simulation tests adequacy, taking into account shadowing effect, is analyzed and provided. The original “RADON-5” laser simulator is designed and used as an effective tool for test structures transient radiation models verification and parameter extraction
Keywords :
CMOS memory circuits; integrated circuit modelling; integrated circuit testing; laser beam effects; random-access storage; transient analysis; CMOS IC; RADON-5 laser simulation; RAM; dose rate; parameter extraction; shadowing; single event effect; test chip; transient radiation model; Analytical models; CMOS integrated circuits; Integrated circuit modeling; Laser modes; Optical design; Parameter extraction; Radiation effects; Semiconductor device modeling; Shadow mapping; Testing;
Conference_Titel :
Microelectronic Test Structures, 1996. ICMTS 1996. Proceedings. 1996 IEEE International Conference on
Conference_Location :
Trento
Print_ISBN :
0-7803-2783-7
DOI :
10.1109/ICMTS.1996.535656
