DocumentCode :
2716577
Title :
Electrical properties of VOx bolometer thin films prepared by metal-organic decomposition
Author :
Son, L.N. ; Tachiki, T. ; Uchida, T.
Author_Institution :
Nat. Defense Acad., Yokosuka, Japan
fYear :
2010
fDate :
5-10 Sept. 2010
Firstpage :
1
Lastpage :
2
Abstract :
Well axis-oriented V2O5 thin films were fabricated by MOD. V2O5 films were reduced to VOx films under a temperature of 530°C and pressures of 1.2-3.0 Pa in O2. VOx films indicated an abrupt transition around 55°C with a resistivity change of 3 orders and TCR of 2.1-2.2 %/K at 300 K.
Keywords :
MOCVD; bolometers; electrical resistivity; thin films; vanadium compounds; V2O5; bolometer thin film; metal organic decomposition; pressure 1.2 Pa to 3.0 Pa; resistivity change; temperature 300 K; temperature 530 degC; Bolometers; Conductivity; Films; Heat treatment; Heating; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
Type :
conf
DOI :
10.1109/ICIMW.2010.5612822
Filename :
5612822
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2716577
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