Title :
Fully integrated CMOS avalanche photodiode and distributed-gain TIA for CW-fNIRS
Author :
Kamrani, Ehsan ; Sawan, Mohamad
Author_Institution :
Electr. Eng. Dept., Ecole Polytech. de Montreal, Montreal, QC, Canada
Abstract :
This paper introduces a CMOS silicon avalanche photodiode (SiAPD) integrated on-chip with an optical trans-impedance amplifier (TIA) to be used in a fNIRS photo-receiver front-end. Proposed SiAPD has the avalanche gain of 200 with the depletion layer thickness of greater than 40μm, its breakdown voltage is 6V and its photon absorption efficiency is 95% and 40% at 700nm and 900nm respectively. The proposed TIA also has a low power consumption (4mW), high transimpedance gain (up to 250MV/A), tunable BW (100KHz-1MHz) and very low input and output noise (280fA/√Hz and 1.5mV/√Hz) all the essential requirements for fNIRS photoreceiver front-end. This circuit is developed using 0.35 CMOS technology and the measurement results verifying the efficiency and preference of this design comparing to the similar available circuits.
Keywords :
CMOS integrated circuits; avalanche photodiodes; operational amplifiers; silicon; CMOS avalanche photodiode; CW-fNIRS; breakdown voltage; depletion layer thickness; distributed gain TIA; fNIRS photoreceiver front end; frequency 100 kHz to 1 MHz; input noise; optical transimpedance amplifier; output noise; photon absorption efficiency; power consumption; silicon avalanche photodiode; transimpedance gain; voltage 6 V; wavelength 700 nm; wavelength 900 nm; Avalanche photodiodes; CMOS integrated circuits; CMOS technology; Layout; Noise; Optical fiber amplifiers;
Conference_Titel :
Biomedical Circuits and Systems Conference (BioCAS), 2011 IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-1469-6
DOI :
10.1109/BioCAS.2011.6107791
