DocumentCode :
271691
Title :
Analysis of different models of iron precipitation in multicrystalline silicon
Author :
Morishige, Ashley E. ; Laine, Hannu S. ; Schön, Jonas ; Hofstetter, Jasmin ; Haarahiltunen, A. ; Schubert, Martin C. ; Savin, H. ; Buonassisi, Tonio
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
3008
Lastpage :
3010
Abstract :
Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the last twenty years, several models describing the distribution and behavior of iron point defects and iron-silicide precipitates have been developed and incorporated into process simulations. The goal of this work is to elucidate what physics are needed to accurately describe industry-relevant as-grown impurity and defect distributions and processing conditions by simulating different material-processing combinations with each model. This rigorous comparison helps scientists and engineers choose the appropriate level of model complexity, and consequently simulation run time, based on material characteristics and processing conditions.
Keywords :
elemental semiconductors; iron; optimisation; silicon; solar cells; Fe; Si; defect distributions; iron point defects; iron precipitation; iron-silicide precipitates; material-processing combinations; multicrystalline silicon; rapid process optimization; solar cell processing; Crystallization; Gettering; Iron; Predictive models; Semiconductor device modeling; Semiconductor process modeling; TCAD; gettering; iron; modeling; phosphorus; photovoltaics; precipitates; silicon; simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925566
Filename :
6925566
Link To Document :
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