• DocumentCode
    2717037
  • Title

    A Compact 16 Watt X-Band GaN-MMIC Power Amplifier

  • Author

    Klockenhoff, Harald ; Behtash, Reza ; Würfl, Joachim ; Heinrich, Wolfgang ; Tränkle, Günther

  • Author_Institution
    Ferdinand-Braun-Inst., Berlin
  • fYear
    2006
  • fDate
    11-16 June 2006
  • Firstpage
    1846
  • Lastpage
    1849
  • Abstract
    GaN MMIC power amplifiers for X-band applications are presented delivering more than 16 W of W output power while being extremely small in chip size. With a single-device amplifier on a 1.8times2.2 mm2 chip 7.8 W output power at 8 GHz are achieved with a maximum PAE of 44%. On a chip of 2.2times3.3 mm2 size only, a two-stage amplifier is realized with 18 dB of linear gain and 16 W output power at 8 GHz. PAE of the MMIC reaches 30%
  • Keywords
    III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; 16 W; 18 dB; 8 GHz; GaN; X-band MMIC power amplifier; single-device amplifier; two-stage amplifier; Gain; Gallium nitride; Gold; MIM capacitors; MMICs; Ohmic contacts; Power amplifiers; Power generation; Pulse amplifiers; Silicon carbide; Coplanar Wave Guide (CPW); Gallium Nitride; MMIC Power Amplifier; X-Band;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2006. IEEE MTT-S International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-9541-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2006.249755
  • Filename
    4015315
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2717037