Single supply 1W Ku-band Power Amplifier Based on 0.25μm E-mode PHEMT

Author

Fujii, Kohei ; Morkner, Henrik

Author_Institution

Wireless Semicond. Div., Avago Technol., Inc., San Jose, CA

fYear

2006

fDate

11-16 June 2006

Firstpage

1855

Lastpage

1858

Abstract

Development of enhancement mode PHEMT (E-PHEMT), single supply, 13 to 17GHz power amplifier MMIC is described. The amplifier was designed with highly integrated lumped-passive based design techniques utilizing a 0.25mum GaAs E-PHEMT production process. The designed power amplifier exhibit 30 dB of small signal gain, 31dBm 1dB gain compression output power with 31% PAE at 16 GHz. This MMIC was fabricated in Avago´s advanced E-PHEMT process and have been demonstrated in fully production capability

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium arsenide; wide band gap semiconductors; 0.25 micron; 1 W; 13 to 17 GHz; E-PHEMT process; E-mode PHEMT; GaAs; Ku-band power amplifier; MMIC power amplifier; enhancement mode PHEMT; microwave FET amplifiers; Equivalent circuits; Intrusion detection; MMICs; PHEMTs; Power amplifiers; Power generation; Power supplies; Production; Resistors; Semiconductor optical amplifiers; MMIC power amplifiers; MMICs; Microwave FET amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249775

Filename

4015317