Title :
Preparation and characterization of lanthanum-modified lead titanate thin films
Author :
Algueró, M. ; Pardo, L. ; Calzada, M.L.
Author_Institution :
Inst. de Ciencia de Materiales de Madrid, CSIC, Madrid, Spain
Abstract :
Lanthanum-modified lead titanate (PTL) ferroelectric thin films are prepared by a recently developed diol-based sol-gel route. Different microstructures are obtained by varying the heating rate during the thermal treatment. Ferroelectric hysteresis loops, pulse response and a.c. current density measurements are carried out to study the thin film electrical behaviour. Conduction is found to be non-negligible. Switchable polarization and coercive field are higher in films heated at a rate higher than 500°C/min than in those heated at 10°C/min
Keywords :
crystal microstructure; current density; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; permittivity; sol-gel processing; (Pb,La)TiO3; (PbLa)TiO3; AC current density; characterization; coercive field; diol-based sol-gel route; ferroelectric hysteresis loops; ferroelectric thin films; heating rate; lanthanum-modified lead titanate thin films; microstructures; preparation; pulse response; switchable polarization; thermal treatment; thin film electrical behaviour; Current density; Current measurement; Density measurement; Ferroelectric materials; Heat treatment; Hysteresis; Microstructure; Pulse measurements; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.598144
