DocumentCode :
2717593
Title :
Microstructure development in lead zirconate titanate ferroelectric thin films during annealing
Author :
Aungkavattana, P. ; Trolier-McKinstry, S.
Author_Institution :
Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
Volume :
2
fYear :
1996
fDate :
18-21 Aug 1996
Firstpage :
801
Abstract :
Lead zirconate titanate (PZT) thin films with a Zr/Ti ratio of 52/48 were prepared by a sol-gel method on platinized Si, (0001) sapphire, and (100) MgO substrates. The evolution in crystallinity was studied in real time during annealing with an in-situ X-ray diffraction system using a Ruud-Barrett Position sensitive Scintillation Detector (R-B PSSD). Annealing rates of 50°C min-1 and 100°C min-1 were utilized to study the growth of an intermediate fluorite or pyrochlore phase and the perovskite phase. This provided evidence on the structure evolution during heat treatment. It is also proposed in this study that spectroscopic ellipsometry (SE) be used to examine the microstructure evolution of PZT thin films during annealing. Changes in optical properties, i.e., the refractive index, as a function of temperature can be determined. Because the refractive index depends on the crystal phase, SE can serve as an indirect means of following the crystallization. The volume fraction of the crystalline phases, the film thickness, and the presence of the surface roughness can also be obtained from SE measurement
Keywords :
X-ray diffraction; annealing; crystal microstructure; crystallisation; ellipsometry; ferroelectric materials; ferroelectric thin films; lead compounds; piezoceramics; refractive index; sol-gel processing; surface topography; thermo-optical effects; (0001) sapphire substrate; 100) MgO substrate; Al2O3; MgO; PZT; PZT thin films; PbZrO3TiO3; Ruud-Barrett Position sensitive Scintillation Detector; Si; annealing; crystal phase; crystallinity; crystallization; film thickness; heat treatment; in-situ X-ray diffraction system; intermediate fluorite phase; microstructure development; optical properties; perovskite phase; platinized Si substrate; pyrochlore phase; real time; refractive index; sol-gel method; spectroscopic ellipsometry; structure evolution; surface roughness; temperature dependence; volume fraction; Annealing; Crystal microstructure; Crystallization; Ferroelectric materials; Optical films; Refractive index; Semiconductor thin films; Substrates; Titanium compounds; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
Type :
conf
DOI :
10.1109/ISAF.1996.598145
Filename :
598145
Link To Document :
بازگشت