• DocumentCode
    2717593
  • Title

    Microstructure development in lead zirconate titanate ferroelectric thin films during annealing

  • Author

    Aungkavattana, P. ; Trolier-McKinstry, S.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    2
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    801
  • Abstract
    Lead zirconate titanate (PZT) thin films with a Zr/Ti ratio of 52/48 were prepared by a sol-gel method on platinized Si, (0001) sapphire, and (100) MgO substrates. The evolution in crystallinity was studied in real time during annealing with an in-situ X-ray diffraction system using a Ruud-Barrett Position sensitive Scintillation Detector (R-B PSSD). Annealing rates of 50°C min-1 and 100°C min-1 were utilized to study the growth of an intermediate fluorite or pyrochlore phase and the perovskite phase. This provided evidence on the structure evolution during heat treatment. It is also proposed in this study that spectroscopic ellipsometry (SE) be used to examine the microstructure evolution of PZT thin films during annealing. Changes in optical properties, i.e., the refractive index, as a function of temperature can be determined. Because the refractive index depends on the crystal phase, SE can serve as an indirect means of following the crystallization. The volume fraction of the crystalline phases, the film thickness, and the presence of the surface roughness can also be obtained from SE measurement
  • Keywords
    X-ray diffraction; annealing; crystal microstructure; crystallisation; ellipsometry; ferroelectric materials; ferroelectric thin films; lead compounds; piezoceramics; refractive index; sol-gel processing; surface topography; thermo-optical effects; (0001) sapphire substrate; 100) MgO substrate; Al2O3; MgO; PZT; PZT thin films; PbZrO3TiO3; Ruud-Barrett Position sensitive Scintillation Detector; Si; annealing; crystal phase; crystallinity; crystallization; film thickness; heat treatment; in-situ X-ray diffraction system; intermediate fluorite phase; microstructure development; optical properties; perovskite phase; platinized Si substrate; pyrochlore phase; real time; refractive index; sol-gel method; spectroscopic ellipsometry; structure evolution; surface roughness; temperature dependence; volume fraction; Annealing; Crystal microstructure; Crystallization; Ferroelectric materials; Optical films; Refractive index; Semiconductor thin films; Substrates; Titanium compounds; Zirconium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
  • Conference_Location
    East Brunswick, NJ
  • Print_ISBN
    0-7803-3355-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1996.598145
  • Filename
    598145