DC-RF Performance Improvement for Strained 0.13 μm MOSFETs mounted on a Flexible Plastic Substrate

By applying 0.7% tensile strain to the flexible die of a 0.13 mum thin-body (40 mum) Si MOSFET mounted on plastic, both the DC and RF performance have been improved. The current I_d,sat was 14.3% higher, and f_T increased from 103 to 118 GHz with NF _min decreasing from 0.89 to 0.75 dB at 10 GHz. These improvements are comparable with those for SiN-capped 90 nm strained-Si nMOS and consistent with device simulations. The approach has the advantages of better RF passive devices on the insulating plastic substrate and low cost