Title :
A Low Power/Low Noise MMIC Amplifier for Phased-Array Applications using InAs/AlSb HEMT
Author :
Deal, William R. ; Tsai, Roger ; Lange, Michael D. ; Boos, J. Brad ; Bennett, Brian R. ; Gutierrez, Augusto
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA
Abstract :
In this paper, we present a two-stage low-power/low-noise MMIC amplifier. At 10-GHz, the amplifier demonstrates high gain (~18-dB) and moderate noise figure (<1.8-dB) at a total DC power consumption of only 1.38-mW. The ultra-low power MMIC amplifier utilizes InAs/AlSb metamorphic HEMT technology, which enables a low-power/low-noise operating point of 0.15-V and 40-mA/mm for each gain stage, considerably lower than either InP or GaAs low-power bias points. The compact design (1.6times2.6-mm2) is realized in coplanar waveguide architecture (CPW), including CPW spiral inductors
Keywords :
HEMT integrated circuits; MMIC amplifiers; aluminium compounds; indium compounds; low noise amplifiers; low-power electronics; 0.15 V; 1.38 mW; 10 GHz; CPW; InAs-AlSb; coplanar waveguide architecture; low noise MMIC amplifier; low power amplifier; metamorphic HEMT technology; phased-array applications; spiral inductors; Coplanar waveguides; Energy consumption; HEMTs; High power amplifiers; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Phase noise; mHEMTs; ABCS; Coplanar Waveguide; HEMT; Low Noise Amplifier; MMIC;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249858
