A Low Power/Low Noise MMIC Amplifier for Phased-Array Applications using InAs/AlSb HEMT

Author

Deal, William R. ; Tsai, Roger ; Lange, Michael D. ; Boos, J. Brad ; Bennett, Brian R. ; Gutierrez, Augusto

Author_Institution

Northrop Grumman Space Technol., Redondo Beach, CA

fYear

2006

fDate

11-16 June 2006

Firstpage

2051

Lastpage

2054

Abstract

In this paper, we present a two-stage low-power/low-noise MMIC amplifier. At 10-GHz, the amplifier demonstrates high gain (~18-dB) and moderate noise figure (<1.8-dB) at a total DC power consumption of only 1.38-mW. The ultra-low power MMIC amplifier utilizes InAs/AlSb metamorphic HEMT technology, which enables a low-power/low-noise operating point of 0.15-V and 40-mA/mm for each gain stage, considerably lower than either InP or GaAs low-power bias points. The compact design (1.6times2.6-mm²) is realized in coplanar waveguide architecture (CPW), including CPW spiral inductors

Keywords

HEMT integrated circuits; MMIC amplifiers; aluminium compounds; indium compounds; low noise amplifiers; low-power electronics; 0.15 V; 1.38 mW; 10 GHz; CPW; InAs-AlSb; coplanar waveguide architecture; low noise MMIC amplifier; low power amplifier; metamorphic HEMT technology; phased-array applications; spiral inductors; Coplanar waveguides; Energy consumption; HEMTs; High power amplifiers; Indium phosphide; Low-noise amplifiers; MMICs; Noise figure; Phase noise; mHEMTs; ABCS; Coplanar Waveguide; HEMT; Low Noise Amplifier; MMIC;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2006. IEEE MTT-S International

Conference_Location

San Francisco, CA

ISSN

0149-645X

Print_ISBN

0-7803-9541-7

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2006.249858

Filename

4015366