Title :
Contributions to development of power SiC devices
Author :
Avram, Marioara ; Brezeanu, Gheorghe ; Iliescu, Ciprian ; Neagoe, Otilia
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Abstract :
A comparative study on high voltage MOSFET and IGBT devices (internal cell, electrical characteristics) demonstrate the similarity of both devices. This work presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for VGS=-80 V), with a specific on-resistance as low as 13 mW/cm2, 100-200 lower than similar IGBT on Si. Comparing the circuit performance to that of a SiC IGBT, it turns out is almost twice faster than the MOSFET.
Keywords :
current density; electric resistance; electrical conductivity; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; -80 V; 2 kV; SiC; SiC IGBT; SiC MOSFET; current density; dynamic properties; electrical conductivity; electrical properties; high voltage IGBT device; high voltage MOSFET device; insulated gate bipolar transistors; internal cell; metal-oxide-semiconductor field effect transistor; power SiC devices; specific on-resistance; static properties; Conductivity; Electron emission; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power dissipation; Semiconductor materials; Silicon carbide; Substrates; Voltage;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1403000
