Title :
Single-Walled Carbon Nanotube Mixers
Author :
Rabieirad, Laleh ; Mohammadi, Saeed
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN
Abstract :
We report fabrication and experimental characterization of metallic single-walled carbon nanotube (SWNT) mixers. Metallic nanotubes attached to gate dielectric (SiO2) and suspended nanotubes were fabricated over poly-Si gate structures. Devices were characterized for their RF mixing performance up to 80MHz. Under identical input signals, the suspended nanotube mixers had about 8 to 13dB higher convergence gain than the devices attached to the gate dielectric. The advantages of using patterned poly-Si gate for RF mixers are low parasitic capacitance from the pad to SWNT contacts, and compatibility of poly-Si gate material with subsequent high temperature growth of SWNTs
Keywords :
carbon nanotubes; mixers (circuits); nanotube devices; silicon compounds; RF mixer; SWNT; SiO2; carbon nanotube mixers; convergence gain; low parasitic capacitance; metallic nanotube; metallic single-walled carbon nanotube; nanotechnology; poly-silicon gate; Carbon nanotubes; Convergence; Crystallization; Dielectrics; Fabrication; Fingers; Parasitic capacitance; Radio frequency; Silicon; Temperature; Carbon nanotube; convergence gain; metallic nanotube; mixer; nanotechnology; poly-silicon; single walled;
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9541-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2006.249859
