• DocumentCode
    2717902
  • Title

    Reduction resistant high purity BaTiO3 for base metal compatibility

  • Author

    Spang, David I. ; Burn, Ian ; Safari, Ahmad

  • Author_Institution
    Degussa Corp., South Plainfield, NJ, USA
  • Volume
    2
  • fYear
    1996
  • fDate
    18-21 Aug 1996
  • Firstpage
    809
  • Abstract
    Studies into the effect of Mn, an electron acceptor dopant, on the material properties of high purity barium titanate densified in reducing atmospheres are presented. The effects of dopant concentration, A/B ratio, and oxygen partial pressure on grain size and reduction resistance of the dielectric are discussed
  • Keywords
    barium compounds; ceramic capacitors; ceramics; densification; ferroelectric capacitors; ferroelectric materials; grain size; manganese; reduction (chemical); A/B ratio; BaTiO3; BaTiO3:Mn; Ni; Ni electrodes; base metal compatibility; densification; dielectric; dopant concentration; electron acceptor dopant; grain size; material properties; multilayer capacitors; oxygen partial pressure; reducing atmospheres; reduction resistant high purity BaTiO3; Atmosphere; Barium; Costs; Dielectric materials; Electrodes; Firing; Hydrogen; Material properties; Nickel; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
  • Conference_Location
    East Brunswick, NJ
  • Print_ISBN
    0-7803-3355-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1996.598147
  • Filename
    598147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2717902