Title :
Ultra sensitive low temperature metal oxide gas sensors
Author :
Kiriakidis, G. ; Katsarakis, N. ; Katharakis, M. ; Suchea, M. ; Galatsis, K. ; Wlodarski, W. ; Kotzias, D.
Author_Institution :
Inst. of Electron. Struct. & Laser, Found. for Res. & Technol., Crete, Greece
Abstract :
InOx films, in the thickness range of 10-725 nm, were grown by dc magnetron sputtering. Their structural, electrical, and O3 and NO2 sensing properties were analyzed at various temperatures. Structural investigations carried out by XRD and AFM showed a strong correlation between crystallinity, surface topology and gas sensitivity. Moreover, the electrical conductivity exhibited a change of over six orders of magnitude during the processes of photoreduction and oxidation. The films have shown sensitivities towards O3 of <50 ppb and NO2 of <100 ppb, at temperatures from RT to 100°C.
Keywords :
X-ray diffraction; atomic force microscopy; electrical conductivity; gas sensors; indium compounds; nanostructured materials; oxidation; semiconductor materials; semiconductor thin films; sputtered coatings; 10 to 725 nm; 20 to 100 degC; AFM; InOx; InOx films; NO2 sensing properties; O3 sensing properties; X-ray diffraction; XRD; atomic force microscopy; crystallinity; dc magnetron sputtering; electrical conductivity; electrical properties; gas sensitivity; oxidation; photoreduction; room temperature; structural properties; surface topology; ultra sensitive low temperature metal oxide gas sensors; Air pollution; Conductive films; Gas detectors; Gases; Indium; Nanoporous materials; Petroleum; Sensor systems; Sputtering; Temperature sensors;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1403007
