Title :
Gate oxides on 4H-SiC substrates grown or annealed in N2O/Ar mixture
Author :
Perez-Tomas, A. ; Godignon, P. ; Tournier, D. ; Mestres, N. ; Millan, J.
Author_Institution :
Centre Nacional de Microelectron., Barcelona, Spain
Abstract :
N2O directly grown gate oxides on 4H-SiC have been characterized using MOS capacitors, under several diluted N2O/Ar furnace conditions. The effect of N2O annealings on standard thermal dry O2 gate oxides has also been analysed comparing the channel mobility of 4H-SiC MOSFETs. The measured 4H-SiC MOSFET transfer characteristics are fitted using a 2D device simulator (MEDICI), taking into account the effect of the interfacial traps density within the band-gap.
Keywords :
MOS capacitors; MOSFET; annealing; circuit simulation; nitrogen compounds; oxidation; semiconductor thin films; silicon compounds; 4H-SiC substrate; MEDICI 2D simulation; MOS capacitors; N2O; N2O annealing; N2O directly grown gate oxides; N2O/Ar furnace conditions; N2O/Ar mixture; SiC; band gap; channel mobility; hydrogenated SiC MOSFET; interfacial traps density; metal-oxide-semiconductor field effect transistor; standard thermal dry O2 gate oxides; transfer characteristics; two dimensional device simulator; Annealing; Argon; Capacitance-voltage characteristics; Chemical analysis; MOS capacitors; MOSFET circuits; Medical simulation; Oxidation; Silicon carbide; Temperature;
Conference_Titel :
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN :
0-7803-8499-7
DOI :
10.1109/SMICND.2004.1403009
