• DocumentCode
    2718036
  • Title

    Inter-trap tunneling in SiO2 films of hydrogen implanted n-Si/SiO2 structures

  • Author

    Simeonov, S. ; Gushterov, A. ; Szekeres, A. ; Kafedjiiska, E.

  • Author_Institution
    Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
  • Volume
    2
  • fYear
    2004
  • fDate
    4-6 Oct. 2004
  • Firstpage
    337
  • Abstract
    Capacitance-voltage measurements at 77 and 300 K have shown that implantation of hydrogen ions with energy of 11 keV into the n-Si/SiO2 structure generates defects in the 120 nm thick SiO2 layer and at the Si/SiO2 interface. In the accumulation mode tunnelling type conduction through the oxide is observed. It is shown that inter-trap tunnelling is responsible for this current.
  • Keywords
    MIS capacitors; electron traps; elemental semiconductors; hydrogen; ion implantation; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; 120 nm; 300 K; 77 K; Si-SiO2; SiO2 films; accumulation mode tunnelling type conduction; capacitance-voltage measurements; defects; hydrogen implanted n-Si-SiO2 structures; inter-trap tunneling; Capacitance; Capacitance-voltage characteristics; Electron traps; Hydrogen; MOS capacitors; Physics; Silicon; Solid state circuits; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
  • Print_ISBN
    0-7803-8499-7
  • Type

    conf

  • DOI
    10.1109/SMICND.2004.1403010
  • Filename
    1403010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2718036