Title :
Carrier lifetime and radiative recombination in quantum dot LEDs
Author :
Li, H. ; Newell, T.C. ; Liu, G.T. ; Stintz, A. ; Malloy, K. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
We have measured the differential carrier lifetime as a function of current density for QD LED samples and used this data to calculate the functional relationship between the carrier lifetime, carrier density and radiative efficiency. The results indicate that carrier filling on the different dot energy levels has a strong influence on the radiative behavior of the devices and that the radiative rate coefficient, B, for different QD levels can vary considerably
Keywords :
carrier density; carrier lifetime; light emitting diodes; radiative lifetimes; semiconductor quantum dots; carrier density; carrier filling; current density; differential carrier lifetime; dot energy levels; quantum dot LEDs; radiative efficiency; radiative rate coefficient; radiative recombination; Charge carrier density; Charge carrier lifetime; Current density; Current measurement; Density measurement; Energy states; Filling; Light emitting diodes; Quantum dots; Radiative recombination;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.890835
