Extraction of parameters of high permittivity ultrathin (0.5-2.0 nm) gate dielectrics

Author

Kar, S.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Kanpur, India

Volume

2

fYear

2004

fDate

4-6 Oct. 2004

Firstpage

341

Abstract

A new capacitance technique is proposed for the extraction of important parameters of MOS nano-transistors with high permittivity ultrathin (equivalent oxide thickness (EOT)=0.5 to 2.0 nm) gate dielectrics. These parameters include the gate dielectric capacitance, the flat-band voltage, the surface potential versus bias relation, the dielectric potential, the quantization indices for the accumulation and the strong inversion layer, the doping density profile right up to the interface, and the flat-band interface charge density.

Keywords

MOSFET; capacitance; dielectric materials; doping profiles; elemental semiconductors; hafnium compounds; interface states; permittivity; semiconductor thin films; silicon; silicon compounds; space charge; surface potential; 0.5 to 2.0 nm; MOS nanotransistors; Si-SiO₂-HfSiON-Si; dielectric potential; doping density profile; flat-band interface charge density; flat-band voltage; gate dielectric capacitance; high permittivity ultrathin gate dielectrics; quantization indices; surface potential; Capacitance measurement; Capacitance-voltage characteristics; Dielectric devices; High K dielectric materials; High-K gate dielectrics; MOS devices; Permittivity; Quantization; Space charge; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International

Print_ISBN

0-7803-8499-7

Type

conf

DOI

10.1109/SMICND.2004.1403011

Filename

1403011