New Meyer-Neldel relations for the depletion and diffusion dark currents in some CCDs

The temperature dependence of the dark currents in some charged-coupled devices (CCDs) was studied. The obtained results point out: a) the compatibility of the theoretical description of these dark currents by means of depletion and diffusion processes, respectively relative to the experimental data, b) the possibility to evaluate - for each pixel - the difference of energies corresponding to the generation-recombination centers and to the intrinsic Fermi level, respectively, c) some new Meyer-Neldel relations between the exponential pre-factors corresponding to the depletion and diffusion currents, and the energy gap E_g of studied semiconductor materials.