DocumentCode
2718363
Title
SiC devices parameters effects on the electrical behaviour of mCascode switch
Author
Boianceanu, C. ; Brezeanu, G. ; Udrea, F. ; Amaratunga, G. ; Brezeanu, M. ; Mihaila, A. ; Draghici, F. ; Enache, I. ; Visoreanu, A.
Author_Institution
Politehnica Univ., Bucharest, Romania
Volume
2
fYear
2004
fDate
4-6 Oct. 2004
Firstpage
389
Abstract
This work is concerned with the behaviour of a hybrid Si/SiC high voltage switch in multiple cascode configuration. The influences of the threshold voltage and of β current factor of the SiC medium power J-FET on the performance of the switch are evinced.
Keywords
elemental semiconductors; field effect transistor switches; junction gate field effect transistors; power semiconductor switches; semiconductor device models; silicon; silicon compounds; wide band gap semiconductors; Si-SiC; SiC devices parameters; SiC medium power J-FET; current factor; electrical properties; field effect transistor switches; hybrid Si-SiC high voltage switch; multiple cascode switch; power semiconductor switches; semiconductor device models; threshold voltage; FETs; HVDC transmission; Hybrid junctions; MOSFETs; Power semiconductor switches; Protection; Silicon carbide; Switching circuits; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Print_ISBN
0-7803-8499-7
Type
conf
DOI
10.1109/SMICND.2004.1403026
Filename
1403026
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