Title :
Design and fabrication of X-band AlGaAs/GaAs power HBTs
Author :
Ihn, B. ; Kim, M.-S. ; Kim, W.N. ; Lee, J.G. ; Park, K.S. ; Chung, M.C. ; Oh, T.K. ; Kang, B.K. ; Kim, B.
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea
Abstract :
We performed systematical thermal design and fabricated X-band 0.5 W class power HBTs. Based on the thermal design, we adopted an HBT with emitter-to-emitter spacing of 30 μm as a standard device. The collector-emitter breakdown voltage is 16 V indicating that 8 V operation is possible. ft, fmax and output power of the HBT at 10 GHz are 67, 58 GHz and 0.58 W, respectively. Various kinds of HBTs with different structures have been studied for reducing the thermal effects and we will present the dominant effect on thermal problems and the measurement data for thermal design guide
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 0.5 W; 10 GHz; 8 V; AlGaAs-GaAs; AlGaAs/GaAs power HBT; X-band; breakdown voltage; cutoff frequency; fabrication; maximum oscillation frequency; output power; thermal design; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Polynomials; Power generation; Temperature dependence; Temperature distribution; Temperature measurement; Thermal conductivity; Voltage;
Conference_Titel :
Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific
Print_ISBN :
962-442-117-X
DOI :
10.1109/APMC.1997.656420
