Design and fabrication of X-band AlGaAs/GaAs power HBTs

Author

Ihn, B. ; Kim, M.-S. ; Kim, W.N. ; Lee, J.G. ; Park, K.S. ; Chung, M.C. ; Oh, T.K. ; Kang, B.K. ; Kim, B.

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

Volume

3

fYear

1997

fDate

2-5 Dec 1997

Firstpage

1113

Abstract

We performed systematical thermal design and fabricated X-band 0.5 W class power HBTs. Based on the thermal design, we adopted an HBT with emitter-to-emitter spacing of 30 μm as a standard device. The collector-emitter breakdown voltage is 16 V indicating that 8 V operation is possible. f_t, f_max and output power of the HBT at 10 GHz are 67, 58 GHz and 0.58 W, respectively. Various kinds of HBTs with different structures have been studied for reducing the thermal effects and we will present the dominant effect on thermal problems and the measurement data for thermal design guide

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 0.5 W; 10 GHz; 8 V; AlGaAs-GaAs; AlGaAs/GaAs power HBT; X-band; breakdown voltage; cutoff frequency; fabrication; maximum oscillation frequency; output power; thermal design; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Polynomials; Power generation; Temperature dependence; Temperature distribution; Temperature measurement; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific

Print_ISBN

962-442-117-X

Type

conf

DOI

10.1109/APMC.1997.656420

Filename

656420