DocumentCode
2719008
Title
THz radiation from InAs surfaces with photonic crystal structures under optical excitation
Author
Kang, Chul ; Yoo, Hyung Keun ; Sohn, Ik-Bu ; Kee, Chul-Sik
Author_Institution
Adv. Photonics Res. Inst., GIST, Gwangju, South Korea
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
1
Abstract
We investigated the characteristics of THz radiation from a n-type InAs wafer with a triangular array of air holes under optical excitation. The periodic array of air holes was introduced by a femtosecond laser machining technique. We observed the power enhancement of THz radiation from the InAs surface surrounded by the air holes in a frequency range.
Keywords
III-V semiconductors; indium compounds; laser beam machining; laser materials processing; photonic crystals; terahertz wave spectra; InAs; THz radiation; air holes; femtosecond laser machining technique; n-type InAs wafer; optical excitation; periodic array; photonic crystal structures; Arrays; Optical device fabrication; Optical surface waves; Photonic crystals; Surface treatment; Surface waves; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612967
Filename
5612967
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