DocumentCode
2719047
Title
Hot-carrier induced degradation of critical paths modeled by rule-based analysis
Author
Kuusinen, Scott B. ; Hu, Chenming
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1995
fDate
1-4 May 1995
Firstpage
69
Lastpage
72
Abstract
An implementation of simple hot carrier rules is presented with the intent of providing insight into reliability problems as early in the design process as possible. To that end, these rules have been incorporated into BERT, a circuit reliability simulator, using a timing simulator as the simulation engine. This allows for quick estimation of problem points in the critical path of large circuits. Furthermore, by exploiting the inverting property of CMOS circuitry, it is possible to remove some of the estimation problems that can arise from false paths. By separating analysis into rising and falling waveforms, and partitioning the circuit into channel connected components, it is possible to prevent analysis of clearly impossible paths
Keywords
CMOS integrated circuits; VLSI; circuit analysis computing; hot carriers; integrated circuit design; integrated circuit reliability; knowledge based systems; timing; BERT; CMOS circuitry; VLSI; channel connected components; circuit reliability simulator; critical paths; false paths; hot-carrier induced degradation; reliability problems; rule-based analysis; simulation engine; timing simulator; Circuit simulation; Degradation; Hot carriers; Integrated circuit reliability; MOS devices; Predictive models; Propagation delay; Time factors; Timing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1995., Proceedings of the IEEE 1995
Conference_Location
Santa Clara, CA
Print_ISBN
0-7803-2584-2
Type
conf
DOI
10.1109/CICC.1995.518139
Filename
518139
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