Circuit techniques for the radiation environment of space

Author

Canaris, John ; Whitaker, Sterling

Author_Institution

Microelectron. Res. Center, New Mexico Univ., Albuquerque, NM, USA

fYear

1995

fDate

1-4 May 1995

Firstpage

77

Lastpage

80

Abstract

Outer space provides a harsh environment for electronic circuits. Even near earth orbits are subject to radiation that can cause temporary upsets of logic states and long term performance degradation of integrated circuits. Catastrophic failure can also be caused by radiation when SCR latchup is induced by a heavy ion strike. This paper reports design techniques which harden MOS circuits against radiation effects in the space environment

Keywords

MOS logic circuits; failure analysis; integrated circuit design; integrated circuit reliability; ion beam effects; radiation hardening (electronics); space vehicle electronics; MOS circuits; SCR latchup; catastrophic failure; electronic circuits; harsh environment; heavy ion strike; logic states; long term performance degradation; near earth orbits; outer space; radiation effects; radiation environment; radiation hardening; space environment; Current supplies; Earth; Electronic circuits; Extraterrestrial phenomena; MOS devices; Microelectronics; Radiation effects; Radiation hardening; Single event upset; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1995., Proceedings of the IEEE 1995

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-2584-2

Type

conf

DOI

10.1109/CICC.1995.518141

Filename

518141