Title :
Circuit techniques for the radiation environment of space
Author :
Canaris, John ; Whitaker, Sterling
Author_Institution :
Microelectron. Res. Center, New Mexico Univ., Albuquerque, NM, USA
Abstract :
Outer space provides a harsh environment for electronic circuits. Even near earth orbits are subject to radiation that can cause temporary upsets of logic states and long term performance degradation of integrated circuits. Catastrophic failure can also be caused by radiation when SCR latchup is induced by a heavy ion strike. This paper reports design techniques which harden MOS circuits against radiation effects in the space environment
Keywords :
MOS logic circuits; failure analysis; integrated circuit design; integrated circuit reliability; ion beam effects; radiation hardening (electronics); space vehicle electronics; MOS circuits; SCR latchup; catastrophic failure; electronic circuits; harsh environment; heavy ion strike; logic states; long term performance degradation; near earth orbits; outer space; radiation effects; radiation environment; radiation hardening; space environment; Current supplies; Earth; Electronic circuits; Extraterrestrial phenomena; MOS devices; Microelectronics; Radiation effects; Radiation hardening; Single event upset; Threshold voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1995., Proceedings of the IEEE 1995
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-2584-2
DOI :
10.1109/CICC.1995.518141
