DocumentCode
2719148
Title
Late news
Volume
2
fYear
2004
fDate
4-6 Oct. 2004
Firstpage
503
Lastpage
503
Abstract
This paper presents a study upon implementation of a nonvolatile memory with a standard CMOS process. The main emphasis is to obtain an analog, continuous value, EEPROM module. The accuracy, reliability and reproducibility performance of the different memory cells have been investigated. Different types of programming methods have been tested and compared EEPROM cells have been processed with two different 0.35 μm CMOS processes and two different process runs. Measurement results show that a reliable, medium accuracy, analog EEPROM can be implemented without any process modifications.
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2004. CAS 2004 Proceedings. 2004 International
Conference_Location
Sinaia, Romania
Print_ISBN
0-7803-8499-7
Type
conf
DOI
10.1109/SMICND.2004.1403059
Filename
1403059
Link To Document