Enhanced terahertz transmission of GaN quantum wells

Author

Laurent, T. ; Sharma, R. ; Torres, J. ; Nouvel, P. ; Blin, S. ; Chusseau, L. ; Palermo, Carmine ; Varani, Luca ; Cordier, Y. ; Chmielowska, Magdalena ; Faurie, J.P. ; Beaumont, B. ; Starikov, E. ; Shiktorov, P. ; Gruzinskis, V.

Author_Institution

Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France

fYear

2010

fDate

5-10 Sept. 2010

Firstpage

1

Lastpage

2

Abstract

The transmission spectra at 300, 77, and 7 K of GaN quantum wells using a 220 - 325 GHz electronic source are investigated. Enhanced signals in the transmission spectra - interpreted as preliminary indications of the activation of the OPTTR mechanism - are obtained when a bias voltage is applied to the device. Results can be considered as a relevant step in the development of devices capable to produce THz radiations.

Keywords

III-V semiconductors; gallium compounds; semiconductor quantum wells; terahertz wave spectra; wide band gap semiconductors; GaN; GaN quantum wells; OPTTR mechanism activation; bias voltage; electronic source; enhanced signals; enhanced terahertz transmission; frequency 220 GHz to 325 GHz; preliminary indications; temperature 300 K; temperature 7 K; temperature 77 K; terahertz radiations; transmission spectra; Electric fields; Frequency domain analysis; Gallium nitride; Phonons; Stimulated emission; Temperature measurement; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Conference_Location

Rome

Print_ISBN

978-1-4244-6655-9

Type

conf

DOI

10.1109/ICIMW.2010.5612973

Filename

5612973