Title :
Room temperature imaging above one terahertz by field effect transistor as detector
Author :
Nadar, S. ; Coquillat, D. ; Sakowicz, M. ; Videlier, H. ; Klimenko, O. ; Teppe, F. ; Dyakonova, N. ; Knap, W. ; Seliuta, D. ; Kasalynas, I. ; Valusis, G.
Author_Institution :
Groupe d´´Etude des Semi-conducteurs, Univ. Montpellier 2, Montpellier, France
Abstract :
GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 μm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; submillimetre wave detectors; submillimetre wave imaging; terahertz wave detectors; GaAs; field effect transistors; frequency 1.63 THz; room temperature imaging; single pixel imaging; temperature 293 K to 298 K; temperature 300 K; transmission mode; Detectors; FETs; Frequency measurement; Gallium arsenide; Imaging; Plasma temperature;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5612983
