2 V 120 nsec 8/16-bit microcontroller with embedded flash EEPROM

Author

Fukumoto, Takahiro ; Hirano, Hiroshige ; Chaya, Shigeo ; Maejima, Takashi ; Honda, Toshiyuki ; Sumi, Tatsumi ; Michiyama, Junji ; Ariga, Rie ; Akashi, Takuo ; Watanabe, Seiji

Author_Institution

Kyoto Res. Lab., Matsushita Electron. Corp., Kyoto, Japan

fYear

1995

fDate

1-4 May 1995

Firstpage

155

Lastpage

158

Abstract

A conventional single-transistor Flash EEPROM memory has been integrated into a 0.8 μm double-metal CMOS high speed low voltage process for custom integrated circuit applications. In general, this type of cell is not suitable for low voltage high speed read applications, because of the broad distribution of its threshold voltage after erasing. We overcome this issue by the novel 2 step erase-verify algorithm to precisely control the threshold voltage throughout the entire memory cells after erasing. In conjunction with this algorithm, several novel circuits design technology has achieved 2 V 120 nsec 8/16 bit microcontroller with embedded 64 Kbyte Flash EEPROM

Keywords

CMOS memory circuits; EPROM; application specific integrated circuits; microcontrollers; 0.8 micron; 120 ns; 16 bit; 2 V; 64 kbyte; 8 bit; custom integrated circuit; double-metal CMOS high speed low voltage process; embedded flash EEPROM; microcontroller; single-transistor memory; threshold voltage; two step erase-verify algorithm; Annealing; CMOS process; CMOS technology; EPROM; Laboratories; Low voltage; Microcontrollers; Nonvolatile memory; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1995., Proceedings of the IEEE 1995

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-2584-2

Type

conf

DOI

10.1109/CICC.1995.518157

Filename

518157