DocumentCode
2719651
Title
Terahertz detection by InGaAs HEMTs in quantizing magnetic fields: Relation between magnetoresistance and photovoltaic response
Author
Klimenko, Oleg A. ; Mityagin, Yury A. ; Videlier, Hadley ; Boubanga-Tombet, Stéphane ; Teppe, Frédéric ; Dyakonova, Nina V. ; Nadar, Salman H. ; Savinov, Sergey A. ; Consejo, Christophe ; Murzin, Vladimir N. ; Knap, Wojciech
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
THz detection by plasma wave mechanism in InGaAs HEMTs is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows to explain the nature of strong oscillations observed in the transistor Terahertz photoresponse.
Keywords
III-V semiconductors; high electron mobility transistors; indium compounds; magnetoresistance; plasma waves; terahertz wave detectors; HEMT; InGaAs; magnetic fields; magnetoresistance; photovoltaic response; plasma wave mechanism; terahertz detection; transistor terahertz photoresponse; Indium gallium arsenide; Logic gates; Magnetic field measurement; Magnetic fields; Magnetoresistance; Oscillators; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5612999
Filename
5612999
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