DocumentCode
2719670
Title
Fabrication and optical characterization of thin film composites for coplanar phase shifters
Author
Sengupta, S. ; Sengupta, L.C.
Author_Institution
AMSRL-MA-CC, Army Res. Lab., MD, USA
Volume
2
fYear
1996
fDate
18-21 Aug 1996
Firstpage
855
Abstract
Oxide composites of barium strontium titanium oxide (BSTO) have been fabricated in thin film form by the pulsed laser deposition (PLA) method. The amount of the oxide additive in the BSTO matrix was varied from 1 wt% to 60 wt%. The thin films were deposited on single crystal sapphire substrates. The intent of this work is to study the effect of the oxide additive on the crystal structure of BSTO and compare it to its bulk ceramic counterpart. Glancing angle X-ray diffraction (GAXRD), Fourier transform Raman spectroscopy (FT-Raman), and Fourier transform Infrared spectroscopy (FT-IR) were utilized in this work. Since the bulk ceramics of these composites of BSTO have already been implemented in low loss electronic scanning antennas, it is necessary to characterize the material in its thin film form for applications at higher microwave frequencies (>35 GHz)
Keywords
Fourier transform spectra; Raman spectra; X-ray diffraction; barium compounds; composite materials; ferroelectric thin films; infrared spectra; microwave phase shifters; pulsed laser deposition; scanning antennas; strontium compounds; Al2O3; BaxSr1-xTiO3 thin film composites; BaSrTiO3; Fourier transform Raman spectroscopy; Fourier transform infrared spectroscopy; coplanar phase shifters; crystal structure; glancing angle X-ray diffraction; high microwave frequencies; low loss electronic scanning antennas; optical characterization; oxide additive; pulsed laser ablation; pulsed laser deposition; single crystal sapphire substrates; Additives; Barium; Ceramics; Fourier transforms; Optical device fabrication; Optical films; Pulsed laser deposition; Sputtering; Strontium; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location
East Brunswick, NJ
Print_ISBN
0-7803-3355-1
Type
conf
DOI
10.1109/ISAF.1996.598160
Filename
598160
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