DocumentCode :
2719686
Title :
Reactive ion etching of barium strontium titanate/oxide composites
Author :
Stowell, S. ; Desu, S.B. ; Sengupta, S.
Author_Institution :
Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume :
2
fYear :
1996
fDate :
18-21 Aug 1996
Firstpage :
859
Abstract :
The reactive ion etching (RIE) method was used for patterning of the oxide composites of barium strontium titanium oxide (BSTO) thin films. We discuss the RIE parameters of not only the undoped BSTO thin films but also that of the oxide composites of the BSTO thin films. The reason for this study is to establish the parameters necessary for patterning the thin films for applications in high frequency coplanar phase shifter elements to be used in e-scan antennas. The thin films were deposited by the pulsed laser ablation (PLD) method
Keywords :
X-ray photoelectron spectra; atomic force microscopy; barium compounds; composite materials; ferroelectric thin films; microwave phase shifters; pulsed laser deposition; scanning antennas; sputter etching; strontium compounds; BaxSr1-xTiO3/oxide composites; BaSrTiO3; RIE; XPS; atomic force microscopy; e-scan antennas; etch rate; high frequency coplanar phase shifter elements; oxide composite patterning; pulsed laser ablation; reactive ion etching; thin films; Barium; Etching; Frequency; Optical pulses; Phase shifters; Pulsed laser deposition; Sputtering; Strontium; Titanium compounds; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
Type :
conf
DOI :
10.1109/ISAF.1996.598161
Filename :
598161
Link To Document :
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