Reactive ion etching of barium strontium titanate/oxide composites

Author

Stowell, S. ; Desu, S.B. ; Sengupta, S.

Author_Institution

Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

2

fYear

1996

fDate

18-21 Aug 1996

Firstpage

859

Abstract

The reactive ion etching (RIE) method was used for patterning of the oxide composites of barium strontium titanium oxide (BSTO) thin films. We discuss the RIE parameters of not only the undoped BSTO thin films but also that of the oxide composites of the BSTO thin films. The reason for this study is to establish the parameters necessary for patterning the thin films for applications in high frequency coplanar phase shifter elements to be used in e-scan antennas. The thin films were deposited by the pulsed laser ablation (PLD) method

Keywords

X-ray photoelectron spectra; atomic force microscopy; barium compounds; composite materials; ferroelectric thin films; microwave phase shifters; pulsed laser deposition; scanning antennas; sputter etching; strontium compounds; Ba_xSr_1-xTiO₃/oxide composites; BaSrTiO₃; RIE; XPS; atomic force microscopy; e-scan antennas; etch rate; high frequency coplanar phase shifter elements; oxide composite patterning; pulsed laser ablation; reactive ion etching; thin films; Barium; Etching; Frequency; Optical pulses; Phase shifters; Pulsed laser deposition; Sputtering; Strontium; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.598161

Filename

598161