DocumentCode
2719695
Title
Detection of high power THz radiation by GaAs High Electron Mobility and Si Field Effect Transistors
Author
Drexler, C. ; Dyakonova, N. ; Schafberger, M. ; Karpierz, K. ; Karch, J. ; Videlier, H. ; Meziani, Y. ; Olbrich, P. ; Knap, W. ; Ganichev, S.
Author_Institution
Terahertz Center, Univ. of Regensburg, Regensburg, Germany
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
2
Abstract
We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasmonic effects in two dimensional electron gases.
Keywords
III-V semiconductors; electron gas; elemental semiconductors; gallium arsenide; high electron mobility transistors; photoconducting devices; plasmonics; silicon; terahertz wave detectors; GaAs; Si; field effect transistor; high electron mobility transistor; photocurrents; plasmonic effects; terahertz radiation detection; two dimensional electron gas; FETs; Gallium arsenide; Laser excitation; Logic gates; Power lasers; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5613001
Filename
5613001
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