Title :
High differential gain single photon avalanche photodiode with improved structure
Author :
Wang, W.J. ; Lin, L. ; Li, T.X. ; Li, N. ; Hu, W.D. ; Lu, W. ; Chen, X.S.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
An InGaAs/InP single-photon avalanche photodiode (SPAD) with a high differential gain was achieved by changing the multiplication region thickness and the sheet charge density of the charge layer. A gain of more than 100 was obtained. The DCR is less than 1k with the frequency up to 250 kHz.
Keywords :
III-V semiconductors; avalanche photodiodes; charge density waves; indium compounds; InGaAs-InP; charge layer; high differential gain single photon avalanche photodiode; multiplication region thickness; sheet charge density; Absorption; Avalanche photodiodes; Dark current; Indium gallium arsenide; Indium phosphide; Photonics; Tunneling;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5613002
