A short channel charge LDD-MOSFET model for analog and digital circuits with low overdrive voltage

Author

Klein, P. ; Hoffmann, K. ; Lemaitre, B.

Author_Institution

Bundeswehr Munich Univ., Neubiberg, Germany

fYear

1995

fDate

1-4 May 1995

Firstpage

229

Lastpage

232

Abstract

A charge LDD-MOSFET model, based on an analytical surface potential formulation at source and drain, for all channel lengths down to deep submicron has been derived and implemented in the circuit simulator SABER. In contrast to all hitherto developed models, this model takes the geometrical dependence of threshold voltage caused by the space charge regions at source and drain (SC-effect) into account. Named effect increases considerably in significance with further downscaling and decreasing supply voltage

Keywords

CMOS integrated circuits; MOSFET; capacitance; circuit analysis computing; semiconductor device models; space charge; surface potential; SABER; analytical surface potential formulation; channel lengths; charge LDD-MOSFET model; circuit simulator; downscaling; geometrical dependence; overdrive voltage; space charge regions; supply voltage; threshold voltage; CMOS technology; Capacitance; Capacitance-voltage characteristics; Channel bank filters; Circuit simulation; Digital circuits; Low voltage; MOSFETs; Solid modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1995., Proceedings of the IEEE 1995

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-2584-2

Type

conf

DOI

10.1109/CICC.1995.518174

Filename

518174