Temperature dependence of dark current mechanisms in long-wavelength arsenic doped HgCdTe photovoltaic devices

A simultaneous-mode nonlinear resistance-voltage curve fitting procedure is applied in the analysis of dark current mechanisms in long-wavelength arsenic doped HgCdTe photovoltaic devices at various temperatures. In order to explore the performance of the devices, six characteristic parameters as function of temperature are extracted from measured current-voltage curves by considering the dominant current mechanisms among diffusion, generation recombination, trap-assisted tunneling, band-to-band tunneling, and series resistance effect under different bias.