Title :
Resonance detection of terahertz radiation in nanometer field-effect transistors with two-dimensional electron gas
Author :
Maremyanin, K.V. ; Gavrilenko, V.I. ; Morozov, S.V. ; Ermolaev, D.M. ; Zemlyakov, V.E. ; Shapoval, S.Yu. ; Fateev, D.V. ; Popov, V.V. ; Maleev, N.A. ; Teppe, F. ; Knap, W.
Author_Institution :
Inst. for the Phys. of Microstructures, RAS, Nizhni Novgorod, Russia
Abstract :
Resonance detection of terahertz radiation by nanometer field-effect transistors GaAs/AlGaAs and transistor structure GaAs/InGaAs with large area slit grating gate has been measured. For these transistors peaks in the resonance photoresponse curve are tunable with gate voltages in accordance with the Dyakonov-Shur theory.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; radiation detection; terahertz waves; two-dimensional electron gas; Dyakonov-Shur theory; nanometer field-effect transistors; resonance detection; resonance photoresponse curve; terahertz radiation; two-dimensional electron gas; Frequency measurement; Gallium arsenide; Gratings; Indium gallium arsenide; Logic gates; Resonant frequency; Transistors;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5613007
