DocumentCode :
2719827
Title :
Photoconductivity of Pb1−XSnXTe(In) narrow-gap semiconductors with variable composition and microstructure in the terahertz range
Author :
Ryabova, Ludmila ; Dobrovolsky, Alexander ; Chernichkin, Vladimir ; Khokhlov, Dmitry ; Dashevsky, Zinovy ; Kasiyan, Vladimir ; Nicorici, Andrei ; Ganichev, Sergey ; Danilov, Sergey ; Kov, Vassily Bel
Author_Institution :
Moscow State Univ., Moscow, Russia
fYear :
2010
fDate :
5-10 Sept. 2010
Firstpage :
1
Lastpage :
2
Abstract :
Photoconductive response at wavelengths up to 500 μm has been detected in Pb1-XSnXTe(In) solid solutions. The effect is observed both in the semi-insulating state and at high levels of electron gas degeneracy. The film microstructure affects the photosensitivity strongly.
Keywords :
IV-VI semiconductors; electron gas; lead compounds; narrow band gap semiconductors; photoconductivity; semiconductor thin films; tin compounds; Pb1-XSnXTeIn; electron gas degeneracy; microstructure; narrow-gap semiconductors; photoconductivity; photosensitivity; semi-insulating state; solid solutions; structure; Films; Grain size; Impurities; Photoconductivity; Solids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
Type :
conf
DOI :
10.1109/ICIMW.2010.5613010
Filename :
5613010
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2719827
بازگشت