DocumentCode :
2719961
Title :
Electrical and mechanical properties of core-shell type structures in doped BaTiO3
Author :
Buchanan, R.C. ; Roseman, R.D. ; Eufinger, K.R.
Author_Institution :
Dept. of Mater. Sci. & Eng., Cincinnati Univ., OH, USA
Volume :
2
fYear :
1996
fDate :
18-21 Aug 1996
Firstpage :
887
Abstract :
Ferroelectric, core-shell type structures consisting of grains having a diffuse shell and a well defined ferroelectric core, have been developed. These materials were processed in such a way as to: (1) yield a gradient in dopant concentration through each grain, generating either a highly doped shell with a virtually dopant free core, or a uniformly modified grain interior; or, (2) generate a core-shell material, with a gradient from dielectric to semiconductor behavior through the material thickness. These type microstructures, derived from controlled isovalent (ZrO2) and/or aliovalent (Y2O3, Nd2O3) doping of the base BaTiO3 material, were investigated for use as sensors, high strain response materials and high permittivity capacitors. Characteristic of these materials is a stress gradient in the grain, controlled by dopant inhomogeneity, creating a clamping of either the dielectric, resistance or piezoelectric properties
Keywords :
barium compounds; dielectric losses; doping profiles; electrical resistivity; electrostriction; ferroelectric capacitors; ferroelectric materials; permittivity; piezoceramics; piezoelectric semiconductors; piezoelectric transducers; powder technology; BaTiO3:Nd2O3; BaTiO3:Y2O3; BaTiO3:ZrO2; ceramic resistivity; controlled aliovalent doping; controlled isovalent doping; core-shell type structures; dielectric constant; dielectric loss; dielectric to semiconductor behavior gradient; diffuse shell; dopant concentration gradient; dopant inhomogeneity,; doped BaTiO3; electrical properties; electrostrictive behavior; ferroelectric core; high permittivity capacitors; high strain response materials; highly doped shell; mechanical properties; piezoelectric coupling coefficient; piezoelectric properties; sensors; stress gradient; uniformly modified grain interior; Capacitive sensors; Dielectric materials; Ferroelectric materials; Mechanical factors; Microstructure; Neodymium; Semiconductor device doping; Semiconductor materials; Sensor phenomena and characterization; Strain control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
Type :
conf
DOI :
10.1109/ISAF.1996.598168
Filename :
598168
Link To Document :
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