Thickness dependence of intense terahertz emission from InAs thin films

Author

Ishibasi, Yutarou ; Sasa, Shigehiko ; Maemoto, Toshihiko ; Inoue, Masataka ; Takeya, Kei ; Tononuchi, Masayoshi

Author_Institution

Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan

fYear

2010

fDate

5-10 Sept. 2010

Firstpage

1

Lastpage

2

Abstract

A systematic study of the intense terahertz (THz) emission from InAs thin films grown on a GaAs substrate was performed by varying the V/III ratio of the InAs. The emission intensity increased as the film thickness increased up to 1 μm and became stronger than that from a p-type InAs substrate for sample of lower V/III ratio. The mechanism of the enhanced THz emission is discussed, and a possible mechanism for the thickness dependence is also presented.

Keywords

III-V semiconductors; indium compounds; luminescence; semiconductor thin films; submillimetre wave spectra; GaAs; GaAs substrate; InAs; InAs V-III ratio; InAs thin films; emission intensity; enhanced THz emission mechanism; film thickness; intense terahertz emission; p-type InAs substrate; thickness dependence; Films; Gallium arsenide; Laser excitation; Laser mode locking; Reflection; Substrates; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on

Conference_Location

Rome

Print_ISBN

978-1-4244-6655-9

Type

conf

DOI

10.1109/ICIMW.2010.5613029

Filename

5613029