Title :
Intraexciton terahertz nonlinear optics in semiconductor quantum wells: Sideband generation and AC Stark splitting
Author :
Wagner, M. ; Schneider, H. ; Stehr, D. ; Winnerl, S. ; Andrews, A.M. ; Schartner, S. ; Strasser, G. ; Helm, M.
Author_Institution :
Inst. of Ion Beam Phys. & Mater. Res., Forschungszentrum Dresden-Rossendorf, (FZD), Dresden, Germany
Abstract :
We investigate nonlinear optics related to the intra-excitonic 1s-2p heavy-hole transition in GaAs/AlGaAs quantum wells. Tuning intense terahertz (THz) light around this resonance we report (i) efficient second order sideband generation and (ii) first clear evidence of the Autler-Townes effect.
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; excitons; gallium arsenide; microwave photonics; optical materials; optical tuning; semiconductor quantum wells; terahertz wave generation; 1s-2p heavy-hole transition; AC Stark splitting; Autler-Townes effect; GaAs-AlGaAs; intense terahertz light tuning; intraexciton terahertz nonlinear optics; second order sideband generation; semiconductor quantum wells; sideband generation; Amplitude modulation; Excitons; Free electron lasers; Gallium arsenide; Laser beams; Laser excitation; Ultrafast optics;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5613051
