Title :
Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon
Author :
Liu, Alan Y. ; Herrick, Robert W. ; Ueda, Osamu ; Petroff, Pierre M. ; Gossard, Arthur C. ; Bowers, John E.
Author_Institution :
Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C, longer than any previous life tests of GaAs lasers epitaxially grown on silicon. No catastrophic failures were observed. The lasers were characterized to gain insight on the aging mechanism.
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; oscillations; quantum dot lasers; semiconductor device reliability; Ge-Si; InAs-GaAs; Si; aging mechanism; constant current stress; lasing oscillation; reliability; self-assembled quantum dot lasers; temperature 30 degC; Aging; Gallium arsenide; Quantum dot lasers; Reliability; Silicon; Quantum dot lasers; semiconductor device reliability; semiconductor lasers; transmission electron microscopy;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2015.2418226
