Title :
Terahertz induced nonlinear effects in doped Silicon observed by open-aperture Z-scan
Author :
Kaur, Gurpreet ; Han, Pengyu ; Zhang, X.-C.
Author_Institution :
Center for Terahertz Res., RPI, Troy, NY, USA
Abstract :
We demonstrate the field dependent transmission of intense Terahertz (THz) pulses in doped Silicon. The strong interaction of charge carriers with the intense THz pulses leads to intervalley scattering of electrons within the conduction band. The change in the mobilities in the different valleys leads to 18% enhancement in the transmission through the sample at the peak THz electric fields of 135 kV/cm.
Keywords :
electron mobility; elemental semiconductors; nonlinear optics; silicon; terahertz wave spectra; Si; charge carriers; conduction band; doped silicon; electron intervalley scattering; electron mobilities; field dependent transmission; intense terahertz pulses; open-aperture Z-scan; terahertz induced nonlinear effects; terahertz wave transmission; Absorption; Conductivity; Crystals; Electric fields; Optical beams; Probes; Silicon;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5613068
