DocumentCode
2720859
Title
Temperature studies of dielectric loss in Silicon Carbide
Author
Jones, C.R. ; Gao, Yuanci
Author_Institution
Dept. of Phys., North Carolina Central Univ., Durham, NC, USA
fYear
2010
fDate
5-10 Sept. 2010
Firstpage
1
Lastpage
1
Abstract
Results for the variation of loss tangent with temperature will be reported for crystalline Silicon Carbide and compared with theoretical expectations based on a two-phonon difference process.
Keywords
dielectric losses; silicon compounds; wide band gap semiconductors; SiC; crystalline silicon carbide; dielectric loss; loss tangent; temperature studies; two-phonon difference process; Conferences; Dielectric losses; Optical resonators; Silicon carbide; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location
Rome
Print_ISBN
978-1-4244-6655-9
Type
conf
DOI
10.1109/ICIMW.2010.5613071
Filename
5613071
Link To Document