Title :
Layer-by-layer photoluminescence and photoreflectance analysis of impurity distribution in HgCdTe
Author :
Lu, Xiang ; Shao, Jun ; Wei, Yanfeng ; Yang, Jianrong
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
Layer-by-layer infrared photoluminescence and photoreflectance measurements are performed on an HgCdTe epliayer. The Cd composition and impurity states along the growth direction are examined, and the vertical distribution is discussed.
Keywords :
II-VI semiconductors; cadmium compounds; crystal growth; impurity distribution; impurity states; lead compounds; photoluminescence; photoreflectance; semiconductor epitaxial layers; Cd composition; HgCdTe; epliayer; growth direction; impurity distribution; impurity states; infrared photoluminescence; layer-by-layer photoluminescence; photoreflectance analysis; vertical distribution; Gallium arsenide; Impurities; Photoluminescence; Physics; Semiconductor device measurement; Spectroscopy;
Conference_Titel :
Infrared Millimeter and Terahertz Waves (IRMMW-THz), 2010 35th International Conference on
Conference_Location :
Rome
Print_ISBN :
978-1-4244-6655-9
DOI :
10.1109/ICIMW.2010.5613074
