Study of low temperature and high heat-resistant fluxless bonding via nanoscale thin film control toward wafer-level multiple chip stacking for 3D LSI

Author

Morinaga, Eiji ; Oka, Yuichi ; Nishimori, H. ; Miyagawa, Hiroki ; Satoh, R. ; Iwata, Yoshiyuki ; Kanezaki, R.

Author_Institution

Div. of Mater. & Manuf. Sci., Osaka Univ., Suita, Japan

fYear

2012

fDate

May 29 2012-June 1 2012

Firstpage

14

Lastpage

19

Abstract

The three dimensional system in package (3D-SiP) has been regarded as a promising solution to the scaling limit problem in the semiconductor industry. Practical realization of the 3D-SiP needs establishing a standard bonding technology for chip stacking. This research focuses on a low temperature and high heat-resistant fluxless bonding method, which can overcome the bump height variation problem in a chip/wafer, using high-boiling alcohol, an indium-tin (InSn) thin film and its transformation into high-melting intermetallic compound (IMC). Experimental studies showed high-rate deposition of InSn alloy and successive deposition of silver achieve successful bonding where the joint has high melting point (higher than 673K).

Keywords

bonding processes; indium alloys; large scale integration; system-in-package; thin films; three-dimensional integrated circuits; tin alloys; wafer level packaging; 3D LSI; 3D-SiP; InSn; bump height variation; heat resistant fluxless bonding; high boiling alcohol; intermetallic compound; nanoscale thin film control; scaling limit problem; semiconductor industry; three dimensional system in package; wafer level multiple chip stacking; Argon; Bonding; Films; Heating; Substrates; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd

Conference_Location

San Diego, CA

ISSN

0569-5503

Print_ISBN

978-1-4673-1966-9

Electronic_ISBN

0569-5503

Type

conf

DOI

10.1109/ECTC.2012.6248799

Filename

6248799