• DocumentCode
    2720980
  • Title

    Characterization of a novel fluxless surface preparation process for die interconnect bonding

  • Author

    Schulte, Eric F. ; Cooper, Keith A. ; Phillips, Matthew ; Shinde, Subhash L.

  • Author_Institution
    SET North America, Chester, NH, USA
  • fYear
    2012
  • fDate
    May 29 2012-June 1 2012
  • Firstpage
    26
  • Lastpage
    30
  • Abstract
    For applications such as 3D integration, flip chip, and other die interconnection processes, a variety of metals is used to form an electrical and mechanical bond between the two components. Native oxides, however, quickly form on many of the common bond materials, hindering the integrity of the joint and adversely affecting long-term reliability. A new method has been developed to reduce these surface oxides and passivate the exposed metal surfaces against re-oxidation. Avoiding the use of acids or the possible exposure to hot electrons, ions and highly energetic atoms of conventional vacuum plasma, the developed and tested processing is carried out in atmospheric ambient to remove native oxides from solders and contact metals, enabling consistent bonding at modest temperatures and bond forces. The processing approach has been applied to a variety of metal and alloy surfaces, with bonding pursued over a range of forces and temperatures. Analysis of treated and untreated surfaces will also be presented, including SEM images and surface analysis techniques such as laser ellipsometry. Finally, physical bonding results will demonstrate the efficacy of the proposed atmospheric surface preparation approach, lowering the temperatures and bond forces required to achieve effective joining between component parts.
  • Keywords
    flip-chip devices; microassembling; semiconductor device metallisation; semiconductor device reliability; three-dimensional integrated circuits; 3D integration; SEM images; atmospheric surface preparation approach; die interconnect bonding; electrical bond; flip chip; fluxless surface preparation process; high energetic atom; laser ellipsometry; long-term reliability; mechanical bond; surface analysis technique; tested processing; vacuum plasma; Bonding; Copper; Indium; Plasma temperature; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
  • Conference_Location
    San Diego, CA
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4673-1966-9
  • Electronic_ISBN
    0569-5503
  • Type

    conf

  • DOI
    10.1109/ECTC.2012.6248801
  • Filename
    6248801