DocumentCode
2720980
Title
Characterization of a novel fluxless surface preparation process for die interconnect bonding
Author
Schulte, Eric F. ; Cooper, Keith A. ; Phillips, Matthew ; Shinde, Subhash L.
Author_Institution
SET North America, Chester, NH, USA
fYear
2012
fDate
May 29 2012-June 1 2012
Firstpage
26
Lastpage
30
Abstract
For applications such as 3D integration, flip chip, and other die interconnection processes, a variety of metals is used to form an electrical and mechanical bond between the two components. Native oxides, however, quickly form on many of the common bond materials, hindering the integrity of the joint and adversely affecting long-term reliability. A new method has been developed to reduce these surface oxides and passivate the exposed metal surfaces against re-oxidation. Avoiding the use of acids or the possible exposure to hot electrons, ions and highly energetic atoms of conventional vacuum plasma, the developed and tested processing is carried out in atmospheric ambient to remove native oxides from solders and contact metals, enabling consistent bonding at modest temperatures and bond forces. The processing approach has been applied to a variety of metal and alloy surfaces, with bonding pursued over a range of forces and temperatures. Analysis of treated and untreated surfaces will also be presented, including SEM images and surface analysis techniques such as laser ellipsometry. Finally, physical bonding results will demonstrate the efficacy of the proposed atmospheric surface preparation approach, lowering the temperatures and bond forces required to achieve effective joining between component parts.
Keywords
flip-chip devices; microassembling; semiconductor device metallisation; semiconductor device reliability; three-dimensional integrated circuits; 3D integration; SEM images; atmospheric surface preparation approach; die interconnect bonding; electrical bond; flip chip; fluxless surface preparation process; high energetic atom; laser ellipsometry; long-term reliability; mechanical bond; surface analysis technique; tested processing; vacuum plasma; Bonding; Copper; Indium; Plasma temperature; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
978-1-4673-1966-9
Electronic_ISBN
0569-5503
Type
conf
DOI
10.1109/ECTC.2012.6248801
Filename
6248801
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