Title :
Properties of thick ZnO layers on oxidized silicon
Author :
Moeller, F. ; Vandahl, T. ; Malocha, D.C. ; Schwesinger, N. ; Buff, W.
fDate :
Oct. 31 1994-Nov. 3 1994
Abstract :
Properties of thick ZnO layers having a thickness of about 20 μm will be discussed in this paper. To achieve ZnO layers with a high resistance, a new sputtering method with a ramp shaped and cycled power process mode was developed. It is shown that it is possible to obtain weak textured <002>-ZnO layers at deposition rates of about 130 nm/min on (100)-Si-substrates with a thin SiO2-film. The specific resistance of the layers was in a range of 2.0*1010 Ωcm to 1.5*1011 Ωcm. The internal stress of the layers, calculated by the measurement of the deflection of the whole wafer, was about 3.0 MPa. Initial measurements have shown that there are possibilities to excite surface acoustic waves in layered structures. This paper presents calculated and measured results for structures with thick ZnO layers. Measurements of SAW properties using thick ZnO layered structures will be shown. Also presented are results on the quality of the ZnO films and the specifics of the deposition process
Keywords :
II-VI semiconductors; acoustic materials; electrical resistivity; internal stresses; semiconductor growth; semiconductor thin films; sputter deposition; zinc compounds; (100)-Si-substrates; Si; Si-SiO2; SiO2; ZnO; cycled power process mode; deposition process; deposition rates; high resistance; internal stress; layered structures; oxidized Si; properties; ramp shaped mode; sputtering method; surface acoustic waves; thick ZnO layers; thin SiO2-film; weak textured layers; Conductivity; Semiconductor films; Semiconductor growth; Sputtering; Stress; Surface acoustic wave materials; Zinc materials/devices;
Conference_Titel :
Ultrasonics Symposium, 1994. Proceedings., 1994 IEEE
Conference_Location :
Cannes, France
Print_ISBN :
0-7803-2012-3
DOI :
10.1109/ULTSYM.1994.401618
