DocumentCode :
2721306
Title :
Simulation challenges in designing high speed serial links
Author :
Chada, Arun Reddy ; Mutnury, Bhyrav ; Wallace, Douglas ; Winterberg, Douglas ; Wang, Minchuan ; Scogna, Antonio Ciccomancini
Author_Institution :
EMC Lab., Missouri Univ. of Sci. & Technol., Rolla, MO, USA
fYear :
2012
fDate :
May 29 2012-June 1 2012
Firstpage :
153
Lastpage :
159
Abstract :
Signal speeds of high speed serial links double almost every generation and with these increasing speeds come a wide range of new modeling and simulation challenges. Modeling challenges involve making sure that models are passive, stable and causal. Frequency-domain models, such as scattering parameter models that have measurement noise or limited bandwidth or incorrectly performed interpolation or extrapolation operations, may exhibit non-causality and non-passivity in time domain. Simulating millions of bits in timedomain to measure the interface merit in terms of bit error rate (BER) is CPU and memory intensive. This challenge has given way to new simulation algorithms and methodologies. The challenge here is that no two simulation approaches result in the same answer. The difference between approaches is aggravated at high frequencies and with inclusion of effects like crosstalk and transmitter and receiver equalization. In this paper, the results from various simulation approaches are contrasted against each other and also against measurements to understand their inherent assumptions along with their impact in designing high speed SerDes.
Keywords :
S-parameters; integrated circuit modelling; peripheral interfaces; CPU; bit error rate; frequency domain model; high speed SerDes design; modeling challenge; noise measurement; scattering parameter model; simulation challenge; speed serial link designing; Convolution; Crosstalk; Data models; Integrated circuit modeling; Mathematical model; Scattering parameters; Time domain analysis; bit error rate; causality; interconnect; passivity; peak-distortion analysis; serial link; statistical approaches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2012 IEEE 62nd
Conference_Location :
San Diego, CA
ISSN :
0569-5503
Print_ISBN :
978-1-4673-1966-9
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2012.6248821
Filename :
6248821
Link To Document :
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